IRFH5306TRPBF IRFH5306 MOSFET transistor

SKU
JD2-007
$0.50
In stock
Only 100 left

JD2-007 D2

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IRFH5306RPBF 

Type Designator: IRFH5306 

Type of Transistor: MOSFET 

Type of Control Channel: N -Channel 

Maximum Power Dissipation (Pd): 3.6 W 

Maximum Drain-Source Voltage |Vds|: 30 V 

Maximum Gate-Source Voltage |Vgs|: 20 V 

Maximum Drain Current |Id|: 15 A 

Maximum Junction Temperature (Tj): 150 °C 

Maximum Drain-Source On-State Resistance (Rds): 0.0081 Ohm 

Package: PQFN5X6 

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It's Location: China

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SKU JD2-007

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