Infineon英飞凌 晶体管IRFH5015TRPBF IRFH5015 MOSFET

IRFH5015RPBF

New cut tape spare. 

Type Designator: IRFH5015 

Type of Transistor: MOSFET 

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.6 W 

Maximum Drain-Source Voltage |Vds|: 150 V 

Maximum Gate-Source Voltage |Vgs|: 20 V 

Maximum Drain Current |Id|: 10 A 

Maximum Junction Temperature (Tj): 150 °C 

Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm

Package: PQFN5X6  

Location: China

The buyer pays the shipping.