Infineon英飞凌 晶体管IRFH5010TRPBF IRFH5010 MOSFET

IRFH5010TRPBF 

Type Designator: IRFH5010

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.6 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: PQFN5X6

It's Location; China

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